Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-10-31
2011-10-04
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S329000, C257SE29198
Reexamination Certificate
active
08030153
ABSTRACT:
A TMOS device (10) is formed using a semiconductor layer (16) of a first type. First and second regions (62,64) of the second type are formed in the semiconductor layer and are spaced apart. A third region (68) is formed in the semiconductor layer by implanting. The third region is between and contacts the first and second doped regions, is of the second conductivity type, and is less heavily doped than the first and second doped regions. A gate stack (67) is formed over a portion of the first doped region, a portion of the second doped region, and the third doped region. By implanting after forming the gate stack, fourth and fifth regions (98,100) of the first type are formed in interior portions of the first and second doped regions, respectively. The third region being of the same conductivity type as the first and second regions reduces Miller capacitance.
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de Fresart Edouard D.
Qin Ganming
Wang Peilin
Zhou Hongwei
Balconi-Lamica Michael J.
Freescale Semiconductor Inc.
Vu David
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