Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-29
2011-03-29
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S275000, C438S629000, C438S533000, C438S276000, C438S277000, C257SE21147, C257SE21198, C257SE21248, C257SE21334, C257SE21337, C257SE21338, C257SE21473
Reexamination Certificate
active
07915128
ABSTRACT:
A transistor suitable for high-voltage applications and a method of manufacture is provided. A first device is formed by depositing a dielectric layer and a conductive layer over a substrate. A hard mask is deposited over the conductive layer and patterned using photolithography techniques. The photoresist material is removed prior to etching the underlying conductive layer and dielectric layer. The hard mask is also used as an implant mask. Another mask may be deposited and formed over the conductive layer to form other devices in other regions of the substrate. The other mask is preferably removed from over the hard mask prior to etching the conductive layer and the dielectric layer.
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Chen Fu-Hsin
Chen Yu Wen
Tien William Wei-Yuan
Tsai Ming-Ren
Singal Ankush k
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
Toledo Fernando L
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