Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having junction gate
Reexamination Certificate
2005-06-28
2010-06-15
Monbleau, Davienne (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having junction gate
C257SE27148, C257SE29265, C257SE21403, C257SE21421
Reexamination Certificate
active
07736961
ABSTRACT:
A high voltage field effect transistor device is fabricated. A substrate is provided. Isolation structures and well regions are formed therein. Drain well regions are formed within the well regions. An n-type channel stop resist mask is formed. N-type channel stop regions and n-type surface channel regions are formed. A p-type channel stop resist mask is formed. P-type channel stop regions and p-type surface channel regions are then formed. A dielectric layer is formed over the surface channel regions. Source regions are formed within the well regions. Drain regions are formed within the drain well regions. Back gate regions are formed within the well regions. Top gates are formed on the dielectric layer overlying the surface channel regions.
REFERENCES:
patent: 5171699 (1992-12-01), Hutter et al.
patent: 5302543 (1994-04-01), Sakakibara
patent: 5710443 (1998-01-01), Blanchard
patent: 5981318 (1999-11-01), Blanchard
patent: 6815759 (2004-11-01), Horiguchi et al.
patent: 6873018 (2005-03-01), Bhattacharyya
patent: 2003/0052347 (2003-03-01), Fung
patent: 2003/0109112 (2003-06-01), Wu
patent: 2004/0140517 (2004-07-01), Tsuchiko
patent: 2006/0170055 (2006-08-01), Mitros et al.
Hower Philip L.
Merchant Steven L.
Paiva Scott
Brady III Wade J.
Franz Warren L.
Monbleau Davienne
Reames Matthew
Telecky , Jr. Frederick J.
LandOfFree
High voltage depletion FET employing a channel stopping implant does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High voltage depletion FET employing a channel stopping implant, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage depletion FET employing a channel stopping implant will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4158233