High temperature ceramic heater assembly with RF capability and

Details High temperature ceramic heater assembly with RF capability and High temperature ceramic heater assembly with RF capability and

1997-02-12

1999-10-19

Paschall, Mark

Electric heating

Metal heating

By arc

21912143, 21912158, 156345, 118723I, 118725, B23K 1000

Patent

active

059683791

ABSTRACT:
The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.

REFERENCES:
patent: 4793975 (1988-12-01), Drage
patent: 4842683 (1989-06-01), Cheng et al.
patent: 5522934 (1996-06-01), Suzuki et al.
patent: 5556474 (1996-09-01), Otani et al.
patent: 5688331 (1997-11-01), Aruga et al.

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