Static information storage and retrieval – Read/write circuit – Precharge
Patent
1998-05-26
2000-05-23
Nelms, David
Static information storage and retrieval
Read/write circuit
Precharge
36523006, 36518911, 36518525, G11C 700
Patent
active
060672641
ABSTRACT:
Disclosed is a high speed semiconductor memory device, which includes a memory cell to which a pair of bit lines are coupled and a discharge circuit for sufficiently discharging one of the bit lines which is being pulled down to a low voltage level in a write operation. Thus, in spite of a short write cycle time, the write operation speed of the memory can be improved without the imperfection in writing a data into the memory cell.
REFERENCES:
patent: 4510584 (1985-04-01), Dias et al.
patent: 4635229 (1987-01-01), Okumura et al.
patent: 4733112 (1988-03-01), Yamaguchi
patent: 5761123 (1998-06-01), Kim et al.
Nelms David
Nguyen Tuan T.
Samsung Electronics Co,. Ltd.
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