High speed semiconductor memory device

Static information storage and retrieval – Read/write circuit – Precharge

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Details

36523006, 36518911, 36518525, G11C 700

Patent

active

060672641

ABSTRACT:
Disclosed is a high speed semiconductor memory device, which includes a memory cell to which a pair of bit lines are coupled and a discharge circuit for sufficiently discharging one of the bit lines which is being pulled down to a low voltage level in a write operation. Thus, in spite of a short write cycle time, the write operation speed of the memory can be improved without the imperfection in writing a data into the memory cell.

REFERENCES:
patent: 4510584 (1985-04-01), Dias et al.
patent: 4635229 (1987-01-01), Okumura et al.
patent: 4733112 (1988-03-01), Yamaguchi
patent: 5761123 (1998-06-01), Kim et al.

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