High-speed programmable read-only memory (PROM) devices

Details High-speed programmable read-only memory (PROM) devices High-speed programmable read-only memory (PROM) devices

2005-03-01

2005-03-01

Thompson, Craig A. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

06861714

ABSTRACT:
A high speed programmable ROM, a memory cell structure therefor, and a method for writing data on/reading data from the programmable ROM are provided. The programmable ROM system has a plurality of memory cell, each of which has a gate, a first electrode, and a second electrode; a plurality of word lines, each of which is connected to the gates of a predetermined number of cells of the plurality of memory cells; a plurality of bit lines, each of which is connected to the first electrodes of a predetermined number of memory cells of the plurality of memory cells and is arranged in a direction substantially perpendicular to the word lines; and a plurality of virtual ground lines, each of which is selectively connected to ground in response to control signals, and is arranged in a direction actually perpendicular to the word lines, wherein the plurality of memory cells are programmed to predetermined logic levels by selectively connecting the second electrode of each of the plurality of memory cells to the plurality of virtual ground lines. The high speed programmable ROM system selectively connects the source of a cell transistor to a virtual ground line according to ROM data such that the capacitance of a bit line can be maintained at a predetermined level without becoming excessively great or small. Thus, the operation speed of the programmable ROM increases and misreading programmed data is minimized.

REFERENCES:
patent: 6507525 (2003-01-01), Nobunaga et al.
patent: 6542396 (2003-04-01), Becker
patent: 2000-62527 (2000-10-01), None
Notice to Submit Response, Korean Application No. 2002-20234, May 31, 2004.

Affiliated with

Also associated with

Rating

High-speed programmable read-only memory (PROM) devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-speed programmable read-only memory (PROM) devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-speed programmable read-only memory (PROM) devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3440154