Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Reexamination Certificate
2005-03-29
2005-03-29
Koslow, C. Melissa (Department: 1755)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
C117S921000, C117S901000, C117S945000, C117S946000, C117S947000, C117S948000, C117S949000, C117S075000, C264S015000, C501S134000, C501S135000, C501S136000, C501S138000, C501S139000, C361S762000, C428S693100, C428S900000, C428S700000, C428S697000, C428S699000, C428S701000, C428S210000, C428S690000, C252S06251C, C252S06251C, C252S062560, C252S062570, C252S062580, C252S062590, C252S062600, C252S062610, C252S062620, C252S062630, C252S062640, C423S593100, C423S598000, C423S610000
Reexamination Certificate
active
06872251
ABSTRACT:
A method for manufacturing single crystal ceramic powder is provided. The method includes a powder supply step for supplying powder consisting essentially of ceramic ingredients to a heat treatment area with a carrier gas, a heat treatment step for heating the powder supplied to the heat treatment area at temperatures required for single-crystallization of the powder to form a product, and a cooling step for cooling the product obtained in the heat treatment step to form single crystal ceramic powder. The method provides single crystal ceramic powder consisting of particles with a very small particle size and a sphericity being 0.9 or higher.
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Akachi Yoshiaki
Kobuke Hisashi
Takaya Minoru
Uematsu Hiroyuki
Hogan & Hartson LLP
Koslow C. Melissa
TDK Corporation
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