High speed and low power signal line driver and semiconductor me

Details High speed and low power signal line driver and semiconductor me High speed and low power signal line driver and semiconductor me

1998-05-15

1999-08-10

Dinh, Son T.

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

36518905, 327108, G11C 700

Patent

active

059368969

ABSTRACT:
A signal line driver operating at high speed and consuming low power and a semiconductor memory device employing the same are disclosed. The signal line driver includes one or more first pull-up transistors, one or more second pull-up transistors, and one or more pull-down transistors. The first pull-up transistor is connected between an external power supply terminal and an output terminal and responds to a first control signal which swings between an internal power supply voltage and a ground voltage. The external power supply terminal receives an external power supply having a voltage level higher than the voltage level of the internal power supply. The first pull-up transistor provides an output signal to the output terminal having the voltage level of the internal power supply voltage minus a predetermined voltage drop. The second pull-up transistor is connected between the internal power supply voltage terminal and the output terminal. The internal power supply terminal receives the internal power supply. The second pull-up transistor increases the voltage level of the output signal to the voltage level of the internal power supply responsive to a second control signal. The pull-down transistor is connected between the output terminal and the ground voltage. The pull-down transistor provides a ground voltage to the output terminal responsive to a third control signal. The semiconductor memory device includes an input buffer, an output buffer, a data input/output line write driver, an input/output line write driver, a data input/output line read driver, and a memory cell array. At least one of the drivers for the semiconductor memory device includes the signal line driver described above.

REFERENCES:
patent: 5512854 (1996-04-01), Park
patent: 5627487 (1997-05-01), Keeth
patent: 5708608 (1998-01-01), Park et al.
patent: 5812010 (1998-09-01), Houk
patent: 5831458 (1998-11-01), Nakagawa

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