Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-08-23
2005-08-23
Chen, Kin-Chan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S722000, C438S734000
Reexamination Certificate
active
06933243
ABSTRACT:
Methods for etching electrodes formed directly on gate dielectrics are provided. In one aspect, an etch process is provided which includes a main etch step, a soft landing step, and an over etch step. In another aspect, a method is described which includes performing a main etch having good etch rate uniformity and good profile uniformity, performing a soft landing step in which a metal/metal barrier interface can be determined, and performing an over etch step to selectively remove the metal barrier without negatively affecting the dielectric. In another aspect, a method is provided which includes a first non-selective etch chemistry for bulk removal of electrode material, a second intermediate selective etch chemistry with end point capability, and then a selective etch chemistry to stop on the gate dielectric.
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“Silicon Trench Etching” Internet Article, pp. 1-7.
Du Yan
Gani Nicolas
Oluseyi Hakeem M.
Shen Meihua
Yauw Oranna
Applied Materials Inc.
Bach Joseph
Chen Kin-Chan
Mosec, Patterson & Sheridan, L.L.P.
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