Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2005-06-07
2010-02-09
Kelly, Cynthia H (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S270100
Reexamination Certificate
active
07659050
ABSTRACT:
Non-chemically amplified radiation sensitive resist compositions containing silicon are especially useful for lithographic applications, especially E-beam lithography. More particularly, radiation-sensitive resist compositions comprising a polymer having at least one silicon-containing moiety and at least one radiation-sensitive moiety cleavable upon radiation exposure to form aqueous base soluble moiety can be used to pattern sub-50 nm features with little or no blur.
REFERENCES:
patent: 4011351 (1977-03-01), Gipstein et al.
patent: 4395481 (1983-07-01), Birkle et al.
patent: 4454222 (1984-06-01), Tada et al.
patent: 4600685 (1986-07-01), Kitakohji et al.
patent: 4745169 (1988-05-01), Sugiyama et al.
patent: 5489678 (1996-02-01), Fodor et al.
patent: 5554465 (1996-09-01), Watanabe
patent: 6303268 (2001-10-01), Namba et al.
patent: 6420084 (2002-07-01), Angelopoulos et al.
patent: 6492089 (2002-12-01), Hatakeyama et al.
patent: 6806361 (2004-10-01), Kajisa et al.
patent: 6939664 (2005-09-01), Huang et al.
patent: 2002/0081520 (2002-06-01), Sooriyakumaran et al.
patent: 2002/0090572 (2002-07-01), Sooriyakumaran et al.
patent: 2005/0009982 (2005-01-01), Inagaki et al.
patent: 1526752 (2004-09-01), None
“Resist Road to the 22 nm Technology Node”, by U. Okoroanyanwu, J.H. Lammers, Future Fab International Issue 17, Lithography, Equipment and Materials.
“Sub-50 nm Half Pitch Imaging with a Low Activation Energy Chemically Amplified Photoresist”, G.M. Wallraf, C.E. Larson, M. Sanchez, C. Rettner, B. Davis, L. Sundberg, W.D. Hinsberg, F.A. Houle, J. A. Hoffnagle, D.R. Medeiros, W-S Huang, K. Petrillo, D. Goldfarb, K. Temple, S. Wind, J. Bucchignano.
“Electron Beam Lithography”, http://www.rpi.edu/dept/materials/COURSES/NANO
ugent/ebeam.html.
Bucchignano James J.
Huang Wu-Song S.
Klaus David P.
Sekaric Lidija
Viswanathan Raman G.
Capella Steven
International Business Machines - Corporation
Johnson Connie P
Kelly Cynthia H
Li Wenjie
LandOfFree
High resolution silicon-containing resist does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High resolution silicon-containing resist, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High resolution silicon-containing resist will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4192898