Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface
Patent
1994-08-03
1996-07-23
Lesmes, George F.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Forming nonplanar surface
430 5, 430313, 430396, G03C 500
Patent
active
055388337
ABSTRACT:
A process of phase edge lithography is employed in the manufacture of very large scale integrated (VLSI) chips in which chrome images are biased on a phase edge of a phase shift mask (PSM) and the mask overexposed to compensate for the positive bias. This overexposure eliminates any residual images from the phase edge mask with minimum impact to the desired images. This simple process results in a trim-less phase edge process that takes advantage of the improved resolution and process latitude of phase edge PSMs while avoiding layout impacts caused by a trim mask or other phase edge elimination methods.
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Jinbo and Yamashita, "Application of Blind Method to Phase-shifting Lithography", 1992 Symposium of VLSI Technology Digest of Technical Papers, pp. 112-113, IEEE.
L. W. Libermann, et al., "A Comprehensive Evaluation of Major Phase . . . in Logic Designs", in Optical/Laser Microlithography VII, SPIE 2197, p. 612 (1994).
Marc D. Levenson, "Phase-Shifting Mask Strategies: Isolated Dark Lines", Microlithography World, Mar./Apr. 1992, pp. 6-12.
T. Brunner, et al., "170 nm Gates Fabricated by Phase-Shift Mask and Top Anti-Reflector Process", SPIE 1927-16, (1993).
Ferguson Richard A.
Liebmann Lars W.
Martino Ronald M.
Newman Thomas H.
International Business Machines - Corporation
Lesmes George F.
Peterson Charles W.
Werner Laura
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