High resistance silicon wafer and its manufacturing method

Details High resistance silicon wafer and its manufacturing method High resistance silicon wafer and its manufacturing method

2008-07-08

2008-07-08

Whitehead, Jr., Carl (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

Deep level dopant

C257SE29109, C257SE21318, C438S471000, C117S002000

Reexamination Certificate

active

07397110

ABSTRACT:
A high-resistance silicon wafer is manufactured in which a gettering ability, mechanical strength, and economical efficiency are excellent and an oxygen thermal donor is effectively prevented from being generated in a heat treatment for forming a circuit, which is implemented on the side of a device maker. A heat treatment for forming an oxygen precipitate nucleus is performed at 500 to 900° C. for 5 hours or more in a non-oxidizing atmosphere and a heat treatment for growing an oxygen precipitate is performed at 950 to 1050° C. for 10 hours or more on a high-oxygen and carbon-doped high-resistance silicon wafer in which resistivity is 100 Ωcm or more, an oxygen concentration is 14×1017atoms/cm3(ASTM F-121, 1979) or more and a carbon concentration is 0.5×1016atoms/cm3or more. By these heat treatments, a remaining oxygen concentration in the wafer is controlled to be 12×1017atoms/cm3(ASTM F-121, 1979) or less. Thus, there is provided a high-resistance, low-oxygen and high-strength silicon wafer in which resistivity is 100 Ωcm or more and an oxygen precipitate (BMD) having a size of 0.2 μm is formed so as to have high density of 1×104/cm2or more.

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