High quality silicon oxide films by remote plasma CVD from...

Details High quality silicon oxide films by remote plasma CVD from... High quality silicon oxide films by remote plasma CVD from...

2011-01-11

2011-01-11

Sandvik, Benjamin P (Department: 2893)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S477000, C438S787000, C438S788000, C257SE21002, C257SE21240

Reexamination Certificate

active

07867923

ABSTRACT:
A method of depositing a silicon and nitrogen containing film on a substrate. The method includes introducing silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor comprises at least two silicon atoms. The method further includes generating at least one radical nitrogen precursor with a remote plasma system located outside the deposition chamber. Moreover, the method includes introducing the radical nitrogen precursor to the deposition chamber, wherein the radical nitrogen and silicon-containing precursors react and deposit the silicon and nitrogen containing film on the substrate. Furthermore, the method includes annealing the silicon and nitrogen containing film in a steam environment to form a silicon oxide film, wherein the steam environment includes water and acidic vapor.

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