Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-12-05
2000-10-31
Nelms, David
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438687, H01L 2144
Patent
active
061402354
ABSTRACT:
The present invention provides a method and apparatus for filling submicron features on a substrate with a polycrystalline metal such as copper or a copper alloy comprising at least 90% by weight of copper. The method comprises deposition of a polycrystalline metal layer which bridges the submicron features and has a grain size smaller than the submicron features, and exposing the polycrystalline metal layer to a high pressure processing gas at a temperature less than one half of the absolute melting temperature to extrude the metal layer into the submicron features.
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Chin Barry
Yao Tse-Yong
Applied Materials Inc.
Berry Renee R.
Nelms David
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