High performance CMOS device structure with mid-gap metal gate

Details High performance CMOS device structure with mid-gap metal gate High performance CMOS device structure with mid-gap metal gate

2005-07-12

2005-07-12

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S223000, C438S224000

Reexamination Certificate

active

06916698

ABSTRACT:
High performance (surface channel) CMOS devices with a mid-gap work function metal gate are disclosed wherein an epitaxial layer is used for a threshold voltage Vt adjust/decrease for the PFET area, for large Vt reductions (˜500 mV), as are required by CMOS devices with a mid-gap metal gate. The present invention provides counter doping using an in situ B doped epitaxial layer or a B and C co-doped epitaxial layer, wherein the C co-doping provides an additional degree of freedom to reduce the diffusion of B (also during subsequent activation thermal cycles) to maintain a shallow B profile, which is critical to provide a surface channel CMOS device with a mid-gap metal gate while maintaining good short channel effects. The B diffusion profiles are satisfactorily shallow, sharp and have a high B concentration for devices with mid-gap metal gates, to provide and maintain a thin, highly doped B layer under the gate oxide.

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