High K stack for non-volatile memory

Details High K stack for non-volatile memory High K stack for non-volatile memory

2009-01-09

2010-12-21

Nguyen, Dao H (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S240000, C438S258000, C438S266000, C438S267000, C257S321000, C257S635000, C257SE21584, C257SE29165, C257SE29309

Reexamination Certificate

active

07855114

ABSTRACT:
A memory device may include a source region and a drain region formed in a substrate and a channel region formed in the substrate between the source and drain regions. The memory device may further include a first oxide layer formed over the channel region, the first oxide layer having a first dielectric constant, and a charge storage layer formed upon the first oxide layer. The memory device may further include a second oxide layer formed upon the charge storage layer, a layer of dielectric material formed upon the second oxide layer, the dielectric material having a second dielectric constant that is greater than the first dielectric constant, and a gate electrode formed upon the layer of dielectric material.

REFERENCES:
patent: 6163049 (2000-12-01), Bui
patent: 6215702 (2001-04-01), Derhacobian et al.
patent: 6407435 (2002-06-01), Ma et al.
patent: 6559014 (2003-05-01), Jeon
patent: 6562491 (2003-05-01), Jeon
patent: 6642573 (2003-11-01), Halliyal et al.
patent: 6693004 (2004-02-01), Halliyal et al.
patent: 6744675 (2004-06-01), Zheng et al.
patent: 6750066 (2004-06-01), Cheung et al.
patent: 6753570 (2004-06-01), Tripsas et al.
patent: 6760270 (2004-07-01), Chindalore et al.
patent: 6768160 (2004-07-01), Li et al.
patent: 6797599 (2004-09-01), Visokay et al.
patent: 6812517 (2004-11-01), Baker
patent: 6902969 (2005-06-01), Adetutu et al.
patent: 6939767 (2005-09-01), Hoefler et al.
patent: 7034356 (2006-04-01), Nomoto et al.
patent: 7071538 (2006-07-01), Shiraiwa et al.
patent: 7074724 (2006-07-01), Donohoe et al.
patent: 7294547 (2007-11-01), Orimoto et al.
patent: 7365389 (2008-04-01), Jeon et al.
patent: 7446369 (2008-11-01), Orimoto et al.
patent: 2002/0024092 (2002-02-01), Palm et al.
patent: 2003/0045082 (2003-03-01), Eldridge et al.
patent: 2004/0028952 (2004-02-01), Cartier et al.
patent: 2006/0160303 (2006-07-01), Ang et al.
http://www.accuratus.com/alumox.html (2010).
Wei Zheng et al., co-pending U.S. Appl. No. 11/086,310, filed Mar. 23, 2005, entitled “High K Stack for Non-Volatile Memory”.
Joong Jeon et al., co-pending U.S. Appl. No. 11/049,855, filed Feb. 4, 2005 entitled “Non-Volatile Memory Device With Improved Erase Speed”.

Affiliated with

Also associated with

Rating

High K stack for non-volatile memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High K stack for non-volatile memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High K stack for non-volatile memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4192617