High K stack for non-volatile memory

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S240000, C438S258000, C438S266000, C438S267000, C257S321000, C257S635000, C257SE21584, C257SE29165, C257SE29309

Reexamination Certificate

active

07855114

ABSTRACT:
A memory device may include a source region and a drain region formed in a substrate and a channel region formed in the substrate between the source and drain regions. The memory device may further include a first oxide layer formed over the channel region, the first oxide layer having a first dielectric constant, and a charge storage layer formed upon the first oxide layer. The memory device may further include a second oxide layer formed upon the charge storage layer, a layer of dielectric material formed upon the second oxide layer, the dielectric material having a second dielectric constant that is greater than the first dielectric constant, and a gate electrode formed upon the layer of dielectric material.

REFERENCES:
patent: 6163049 (2000-12-01), Bui
patent: 6215702 (2001-04-01), Derhacobian et al.
patent: 6407435 (2002-06-01), Ma et al.
patent: 6559014 (2003-05-01), Jeon
patent: 6562491 (2003-05-01), Jeon
patent: 6642573 (2003-11-01), Halliyal et al.
patent: 6693004 (2004-02-01), Halliyal et al.
patent: 6744675 (2004-06-01), Zheng et al.
patent: 6750066 (2004-06-01), Cheung et al.
patent: 6753570 (2004-06-01), Tripsas et al.
patent: 6760270 (2004-07-01), Chindalore et al.
patent: 6768160 (2004-07-01), Li et al.
patent: 6797599 (2004-09-01), Visokay et al.
patent: 6812517 (2004-11-01), Baker
patent: 6902969 (2005-06-01), Adetutu et al.
patent: 6939767 (2005-09-01), Hoefler et al.
patent: 7034356 (2006-04-01), Nomoto et al.
patent: 7071538 (2006-07-01), Shiraiwa et al.
patent: 7074724 (2006-07-01), Donohoe et al.
patent: 7294547 (2007-11-01), Orimoto et al.
patent: 7365389 (2008-04-01), Jeon et al.
patent: 7446369 (2008-11-01), Orimoto et al.
patent: 2002/0024092 (2002-02-01), Palm et al.
patent: 2003/0045082 (2003-03-01), Eldridge et al.
patent: 2004/0028952 (2004-02-01), Cartier et al.
patent: 2006/0160303 (2006-07-01), Ang et al.
http://www.accuratus.com/alumox.html (2010).
Wei Zheng et al., co-pending U.S. Appl. No. 11/086,310, filed Mar. 23, 2005, entitled “High K Stack for Non-Volatile Memory”.
Joong Jeon et al., co-pending U.S. Appl. No. 11/049,855, filed Feb. 4, 2005 entitled “Non-Volatile Memory Device With Improved Erase Speed”.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High K stack for non-volatile memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High K stack for non-volatile memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High K stack for non-volatile memory will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4192617

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.