Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-05-17
2011-05-17
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S275000, C438S287000, C438S767000
Reexamination Certificate
active
07943460
ABSTRACT:
A method of forming a semiconductor device is provided that includes forming a Ge-containing layer atop a p-type device regions of the substrate. Thereafter, a first dielectric layer is formed in a second portion of a substrate, and a second dielectric layer is formed overlying the first dielectric layer in the second portion of the substrate and overlying a first portion of the substrate. Gate structures may then formed atop the p-type device regions and n-type device regions of the substrate, in which the gate structures to the n-type device regions include a rare earth metal.
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Bu Huiming
Chudzik Michael P.
Henson William K.
Khare Mukesh V.
Mo Renee T.
International Business Machines - Corporation
Novacek Christy L
Schnurmann H. Daniel
Scully , Scott, Murphy & Presser, P.C.
Smith Zandra
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