High-k dielectric film, method of forming the same and...

Details High-k dielectric film, method of forming the same and... High-k dielectric film, method of forming the same and...

2011-04-12

2011-04-12

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S763000, C438S785000, C438S786000, C257SE21267, C257SE21302

Reexamination Certificate

active

07923336

ABSTRACT:
A high-k dielectric film, a method of forming the high-k dielectric film, and a method of forming a related semiconductor device are provided. The high-k dielectric film includes a bottom layer of metal-silicon-oxynitride having a first nitrogen content and a first silicon content and a top layer of metal-silicon-oxynitride having a second nitrogen content and a second silicon content. The second nitrogen content is higher than the first nitrogen content and the second silicon content is higher than the first silicon content.

REFERENCES:
patent: 6020243 (2000-02-01), Wallace et al.
patent: 6960537 (2005-11-01), Shero et al.

Affiliated with

Also associated with

Rating

High-k dielectric film, method of forming the same and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-k dielectric film, method of forming the same and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-k dielectric film, method of forming the same and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2698787