Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1993-06-25
1997-04-08
Dang, Thi
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
1566461, 216 71, 20419232, 20429834, 134 11, 438710, H05H 100
Patent
active
056183828
ABSTRACT:
A plasma process apparatus capacitor operation significantly above 13.56 MHz can produce reduced self-bias voltage of the powered electrode to enable softer processes that do not damage thin layers that are increasingly becoming common in high speed and high density integrated circuits. A nonconventional match network is used to enable elimination of reflections at these higher frequencies. Automatic control of match network components enables the rf frequency to be adjusted to ignite the plasma and then to operate at a variable frequency selected to minimize process time without significant damage to the integrated circuit.
REFERENCES:
patent: 5223457 (1993-06-01), Mintz et al.
English translation of Japanese Kokai Patent Application No. Hei 2[1990]-298024; 45 pp.
English translation of Japanese Kokai Utility Model No. Hei 2[1990]-4238; 22 pp.
Collins Kenneth S.
Hanawa Hiroji
Maydan Dan
Mintz Donald M.
Somekh Sasson
Applied Materials Inc.
Dang Thi
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