High efficiency CMOS image sensor pixel employing dynamic...

Details High efficiency CMOS image sensor pixel employing dynamic... High efficiency CMOS image sensor pixel employing dynamic...

2008-03-19

2010-02-02

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27132, C257S291000, C348S308000, C348S310000

Reexamination Certificate

active

07655966

ABSTRACT:
A global shutter compatible pixel circuit comprising a reset gate (RG) transistor is provided in which a dynamic voltage is applied to the drain of the reset gate transistor in order to reduce a floating diffusion (FD) leakage therethrough during signal hold time. The drain voltage of the reset gate transistor is held at a lower voltage than a circuit supply voltage to minimize the off-state leakage through the RG transistor, thus reducing the change in the voltage at the floating diffusion during the signal hold time. In addition, a design structure for such a circuit providing a dynamic voltage to the drain of a reset gate of a pixel circuit is also provided.

REFERENCES:
patent: 6493030 (2002-12-01), Kozlowski
patent: 7253461 (2007-08-01), Yang et al.
patent: 2007/0013798 (2007-01-01), Ahn et al.
patent: 2007/0132869 (2007-06-01), Genilloud et al.
patent: WO 2006/130443 (2006-12-01), None

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