High density plasma and bias RF power process to make stable...

Details High density plasma and bias RF power process to make stable... High density plasma and bias RF power process to make stable...

2007-09-18

2007-09-18

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S786000, C438S788000, C438S792000

Reexamination Certificate

active

11029835

ABSTRACT:
An embodiment of the invention is a HDP CVD FSG layer and an HDP CVD SIN layer with more stability (e.g., less free F and less free H). A feature is that the FSG and SIN are formed using a HDP CVD process with a high plasma density between 1E12 and 1E15 ions/cc and more preferably between 1E14 and 1E15 ions/cc. The high bias has sufficient energy to break the F—Si bonds in the FSG. The high bias has sufficient energy to break the H—Si bonds in the silicon nitride. Whereby the FSG layer has less F and the SiN layer has less H that increases the FSG/SiN interface reliability. The embodiments can be used on smooth surfaces (non-gap fill applications).

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