High aspect ratio contact

Details High aspect ratio contact High aspect ratio contact

1998-12-07

1999-10-19

Utech, Benjamin

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

134 12, 216 79, 438725, 438723, B08B 600

Patent

active

059682787

ABSTRACT:
An improved etching procedure that uses three processing steps to vastly improve HAR opening profile and improved under-layer selectivity. A new three sequence etching process is provided during which a new three-gas plasma etch is to be used. This new etching sequence is preceded by a new main etch that uses three gasses and followed by a new over-etch procedure that uses the same three gasses and etching conditions as the new main etch.

REFERENCES:
patent: 5366590 (1994-11-01), Kadomura
patent: 5429710 (1995-07-01), Akiba et al.
patent: 5445712 (1995-08-01), Yahagida
patent: 5658425 (1997-08-01), Halman et al.
patent: 5783496 (1998-07-01), Flanner et al.
patent: 5817579 (1998-10-01), Ko et al.

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