Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2011-08-09
2011-08-09
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C438S053000, C438S752000, C257SE21002, C257SE21214
Reexamination Certificate
active
07993949
ABSTRACT:
The invention relates to a method of making a component from a heterogeneous substrate comprising first and second portions in at least one monocrystalline material, and a sacrificial layer constituted by at least one stack of at least one layer of monocrystalline Si situated between two layers of monocrystalline SiGe, the stack being disposed between said first and second portions of monocrystalline material, wherein the method consists in etching said stack by making:e) at least one opening in the first and/or second portion and the first and/or second layer of SiGe so as to reach the layer of Si; andf) eliminating all or part of the layer of Si.
REFERENCES:
patent: 7625772 (2009-12-01), Casset et al.
patent: 7906439 (2011-03-01), Perruchot et al.
patent: 2009/0206422 (2009-08-01), Illing et al.
patent: 10 2006 032195 (2008-01-01), None
patent: 1 905 734 (2008-04-01), None
International Search Report for French Application No. 08/03496, filed Jun. 23, 2008.
Clavelier Laurent
Defay Emmanuel
Diem Bernard
Larrey Vincent
Perruchot François
Alston & Bird LLP
Commissariat a l''Energie Atomique
Enad Christine
Smith Matthew
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