Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-11-02
2009-11-10
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C438S586000, C438S791000
Reexamination Certificate
active
07615432
ABSTRACT:
A stress nitride structure is formed on an integrated circuit field effect transistor by high density plasma (HDP) depositing a first stress nitride layer on the integrated circuit field effect transistor and then plasma enhanced chemical vapor depositing (PECVD) a second stress nitride layer on the first stress nitride layer. The first stress nitride layer is non-conformal and the second stress nitride layer is conformal. Related structures also are described.
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Office Action, Korean Application 10-2006-0099513, Mar. 21, 2008.
Kim Jun-jung
Ku Ja-hum
Park Jae-eun
Yang Dae-won
Brown Valerie
International Business Machines - Corporation
Myers Bigel Sibley & Sajovec P.A.
Nguyen Ha Tran T
Samsung Electronics Co,. Ltd.
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