Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2005-06-21
2005-06-21
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S666000, C438S667000, C438S668000, C438S672000, C438S673000, C438S978000, C216S039000
Reexamination Certificate
active
06908862
ABSTRACT:
A method of depositing a film on a substrate disposed in a substrate processing chamber. The method includes depositing a first portion of the film by forming a high density plasma from a first gaseous mixture flown into the process chamber. The deposition processes is then stopped and part of the deposited first portion of the film is etched by flowing a halogen etchant into the processing chamber. Next, the surface of the etched film is passivated by flowing a passivation gas into the processing chamber, and then a second portion of the film is deposited over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber. In one embodiment the passivation gas consists of an oxygen source with our without an inert gas.
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Chen Xiaolin C.
Li Dongqing
Zhang Lin
Applied Materials Inc.
Berry Renee R.
Nelms David
Townsend & Townsend & Crew
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