Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1997-12-29
2000-03-28
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438720, H01L 2100, H01L 213065
Patent
active
060431636
ABSTRACT:
A new method of etching metal lines using HCl in the overetch step to prevent undercutting of the metal lines is described. Semiconductor device structures are provided in and on a semiconductor substrate. The semiconductor device structures are covered with an insulating layer. A barrier metal layer is deposited overlying the insulating layer. A metal layer is deposited overlying the barrier metal layer. A hard mask layer is deposited overlying the metal layer. The hard mask layer is covered with a layer of photoresist which is exposed, developed, and patterned to form the desired photoresist mask. The hard mask layer is etched away where it is not covered by the photoresist mask leaving a patterned hard mask. The metal layer is etched away where it is not covered by the patterned hard mask to form the metal lines. Overetching is performed to remove the barrier layer where it is not covered by the hard mask wherein HCl gas is one of the etchant gases used in the overetching whereby hydrogen ions from the HCl gas react with the metal layer and the barrier metal layer to form a passivation layer on the sidewalls of the metal lines thereby preventing undercutting of the metal lines resulting in metal lines having a vertical profile. The photoresist mask is removed and fabrication of the integrated circuit device is completed.
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Chen Chao-Cheng
Tao Hun-Jan
Tsai Chia-Shiung
Ackerman Stephen B.
Pike Rosemary L.S.
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
Umez-Eronini Lynette T.
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