Hafnium titanium oxide films

Details Hafnium titanium oxide films Hafnium titanium oxide films

2005-05-27

2009-08-11

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S387000, C438S396000, C438S264000, C438S785000

Reexamination Certificate

active

07572695

ABSTRACT:
Embodiments of a dielectric layer containing a hafnium titanium oxide film structured as one or more monolayers include the dielectric layer disposed in an integrated circuit. Embodiments of methods of fabricating such a dielectric layer provide a dielectric layer for use in a variety of electronic devices.

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