Hafnium tantalum oxide dielectrics

Details Hafnium tantalum oxide dielectrics Hafnium tantalum oxide dielectrics

2007-04-13

2009-10-13

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S410000

Reexamination Certificate

active

07602030

ABSTRACT:
A dielectric layer containing a hafnium tantalum oxide film and a method of fabricating such a dielectric layer produce a dielectric layer for use in a variety of electronic devices. Embodiments include structures for capacitors, transistors, memory devices, and electronic systems with dielectric layers containing a hafnium tantalum oxide film structured as one or more monolayers.

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