Semiconductor memory device improved in data writing

Details Semiconductor memory device improved in data writing Semiconductor memory device improved in data writing

2007-04-23

2009-11-10

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185050, C365S185270

Reexamination Certificate

active

07616491

ABSTRACT:
A bit line is shared by first and second NAND units. First and second selection transistors are connected in series between the bit line and the first NAND unit. Third and fourth selection transistors are connected in series between the bit line and the second NAND unit. A control unit changes a first and second signals and a potential of the bit line from a first level to a second level higher than a first level, and changes the potential of the bit line from the second level to the first level after changing the first signal from the second level to the first level.

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Allen et al., CMOS Analog Circuit Design, 1987, Saunders College Publishing, pp. 54, 98, 102.
Allen et al., CMOS Analog Circuit Design, 1987, Saunders College Publishing, all pages, in particular 51-54, 98, 102.

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