Hafnium lanthanide oxynitride films

Details Hafnium lanthanide oxynitride films Hafnium lanthanide oxynitride films

2011-08-02

2011-08-02

Zarneke, David A (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S591000, C438S622000, C438S641000, C257S396000, C257S405000, C257SE21013, C257SE21021, C257SE21168, C257SE21171, C257SE21197, C257SE21209, C257SE21396, C257SE27087, C257SE29302, C257SE21274

Reexamination Certificate

active

07989362

ABSTRACT:
Electronic apparatus and methods of forming the electronic apparatus include a hafnium lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The hafnium lanthanide oxynitride film may be structured as one or more monolayers. Metal electrodes may be disposed on a dielectric containing a hafnium lanthanide oxynitride film.

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