Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2010-04-20
2011-10-04
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S779000, C257S784000, C257SE21599
Reexamination Certificate
active
08030769
ABSTRACT:
A method of forming a semiconductor device includes providing a bumped wafer. A plurality of grooves is formed in an active surface of the bumped wafer. A pre-underfill layer is disposed over the active surface, filling the plurality of grooves. A first adhesive layer is mounted to the pre-underfill layer, and a back surface of the bumped wafer is ground. A second adhesive layer is mounted to the back surface of the bumped wafer. The first adhesive layer is peeled from the active surface of the bumped wafer, or the second adhesive layer is mounted to the first adhesive layer. The bumped wafer is singulated into a plurality of segments by cutting the bumped wafer along the plurality of grooves.
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Lee Sungyoon
Lee Tae-woo
Shin Junghoon
Atkins Robert D.
Le Dung A.
Patent Law Group
STATS ChipPAC Ltd.
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