Grooving bumped wafer pre-underfill system

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads

Reexamination Certificate

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Details

C257S779000, C257S784000, C257SE21599

Reexamination Certificate

active

08030769

ABSTRACT:
A method of forming a semiconductor device includes providing a bumped wafer. A plurality of grooves is formed in an active surface of the bumped wafer. A pre-underfill layer is disposed over the active surface, filling the plurality of grooves. A first adhesive layer is mounted to the pre-underfill layer, and a back surface of the bumped wafer is ground. A second adhesive layer is mounted to the back surface of the bumped wafer. The first adhesive layer is peeled from the active surface of the bumped wafer, or the second adhesive layer is mounted to the first adhesive layer. The bumped wafer is singulated into a plurality of segments by cutting the bumped wafer along the plurality of grooves.

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patent: 2005/0142837 (2005-06-01), Tsai et al.
patent: 2005/0148160 (2005-07-01), Farnworth et al.

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