Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Patent
1997-10-27
1999-07-20
Niebling, John
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
438781, 438931, 438952, H01L 2131, H01L 21469
Patent
active
059267402
ABSTRACT:
A substantially continuously graded composition silicon oxycarbide (SiOC) antireflective coating (ARC) or antireflective layer (ARL) is interposed between a photoresist layer and an underlying substrate. The ARC matches an optical impedance at the interface between the ARC and photoresist. The optical impedance decreases (absorptivity increases) substantially continuously, in the ARC in a direction away from the interface between the ARC and the photoresist. The ARC composition is graded from SiOC, at its interface with the photoresist, to SiC or Si, in a direction away from the photoresist. Reflections at the ARC-photoresist interface are substantially eliminated. Substantially all incident light, including ultraviolet (UV) and deep ultraviolet (DUV) light, is absorbed in the ARC. As a result, substantially no light reaches or is reflected from the underlying substrate. Photolithographic limitations such as swing effect and reflective notching are reduced.
REFERENCES:
patent: 4507673 (1985-03-01), Aoyama et al.
patent: 4647472 (1987-03-01), Hiraki et al.
patent: 4893273 (1990-01-01), Usami
patent: 5032233 (1991-07-01), Yu et al.
patent: 5066611 (1991-11-01), Yu
patent: 5111430 (1992-05-01), Morie
patent: 5124780 (1992-06-01), Sandhu et al.
patent: 5238866 (1993-08-01), Bolz et al.
patent: 5260593 (1993-11-01), Lee
patent: 5293560 (1994-03-01), Harari
patent: 5313076 (1994-05-01), Yamazaki et al.
patent: 5317535 (1994-05-01), Talreja et al.
patent: 5369040 (1994-11-01), Halvis et al.
patent: 5378659 (1995-01-01), Roman et al.
patent: 5388069 (1995-02-01), Kokubo
patent: 5424993 (1995-06-01), Lee et al.
patent: 5438544 (1995-08-01), Makino
patent: 5449941 (1995-09-01), Yamazaki et al.
patent: 5465249 (1995-11-01), Cooper et al.
patent: 5467306 (1995-11-01), Kaya et al.
patent: 5477485 (1995-12-01), Bergemont et al.
patent: 5493140 (1996-02-01), Iguchi
patent: 5508543 (1996-04-01), Hartstein et al.
patent: 5525542 (1996-06-01), Maniar et al.
patent: 5530581 (1996-06-01), Cogan
patent: 5580380 (1996-12-01), Liu et al.
patent: 5670790 (1997-09-01), Katoh et al.
patent: 5674356 (1997-10-01), Nagayama
Akasaki, I., et al,. "Effects of AlN Buffer Layer on Crystallographic Structure and on Electrical and Optical Properties of GaN and Sapphire Substrate by MOVPE", J. Crystal Growth, 98, 209-219, (1989).
Alok, D., et al., "Electrical Properties of Thermal Oxide Grown on N-type 6H-Silicon Carbide", Applied Physcis Letters, 64, 2845-2846, (May 23, 1994).
Andrieux, M., et al., "Interface and Adhesion of PACVD SiC Based Films on Metals", Supp. Le Vide: science, technique et applications, 279, 212-214, (1996).
Bachmann, P., et al., "Influence on Surface Modifications on the Electronic Properties of CVD Diamond Films", Diamond and Related Materials, 5, 1378-1383, (1996).
Baglee, D., "Characteristics & Reliability of 100 Angstrom Oxides", IEEE 22nd Annual Proc.: Reliability Physics, Las Vegas, 152-155, (Apr. 3-5, 1984).
Beheim, G., et al., "Magnetron Plasma Etching of SiC for Microstructures", Proc: SPIE -Integrated Optics and Microstructures III, San Jose, CA, 82-86, (Jan. 29, 1996).
Bengtsson, S., et al, "Applications of Aluminum Nitride Films Deposited by Reactive Sputtering to Silicon-On-Insulator Materials", Japanese J. Applied Physics, 35, 4175-4181. (1996).
Benjamin, M., et al., "UV Photoemission Study of Heteroepitaxial A1GaN Films Grown on 6H-SiC", Applied Surface Science, 104/105, 455-460, (1996).
Bermudez, V., et al., "The Growth and Properties of A1 and A1N Films on GaN(0001)-(1 .div. 1)", J. Applied Physics, 79, 110-119, (Jan. 1996).
Boeringer, D.W., et al., "Avalanche amplification of multiple resonant tunneling through parallel silicon microcrystallites", Physical Rev. B, 51, 13337-13343, (1995).
Casey, H., et al., "Low Interface Trap Density for Remote Plasma Deposited SiO2 on n-type GaN", Applied Phys. Lett., 68, 1850-1852, (Mar. 1996).
Chang, C., et al., "Novel Passivation Dielectrics-The Boron-or Phosphorus-Doped Hydrogenated Amorphous Silicon Carbide Films", Journal of the Electrochemical Society, 132, 418-422, (Feb. 1985).
Choi, J., et al., "Effect of Deposition Conditions and Pretreatments on the Microstructure of MPECVD Diamond Thin Films", Materials Chemistry and Physics, 45, 45, 176-179, (1996).
Cirelli, R., et al., "A Multilayer Inorganic Antireflective System for use in 248 nm Deep Ultraviolet Lithography", J. Vac. Sci. Technol. B, 14, 4229-4233, (Nov./Dec. 1996).
Clarke, G., et al., "The Infrared Properties of Magnetron-Sputtered Diamond-Like Thin Films", Thin Solid Films, 280, 130-135, (1996).
Compagnini, G., et al., "Spectroscopic Characterization of Annealed Si(1-x)C(x) Films", J. Materials Res., 11, 2269-2273, (Sep. 1996).
Dartnell, N., et al., "Reactive Ion Etching of Silicon Carbide (Si(x)C(1-x))", Vacuum, 46, 349-355, (1995).
Demichelis, F., et al., "Influence of Doping on the Structural and Optoelectronic Properties of Amorphous and Microcrystalline Silicon Carbide", Journal of Applied Physics, 72, 1327-1333, (Aug. 15, 1992).
Demichelis, F., et al., "Physical Properties of Undoped and Doped Microcrystalline SiC:H Deposited By PECVD", Materials Research Society Symposium Proceedings, 219, Anaheim, CA, 413-418, (Apr. 30 -May 3, 1991).
Dipert, B., et al., "Flash Memory Goes Mainstream", IEEE Spectrum, 30, 48-52, (1993).
Edelberg, E., et al., "Visible Luminescence from Nanocrystalline silicon films produced by plasma enhanced chemical vapor deposition", Appl. Phys. Lett., 68, 1415-1417, (1996).
Fissel, A., et al., "Epitaxial Growth of SiC Thin Films on Si-stabilized alpha-SiC (0001) at Low Temperatures by Solid-source Molecular Beam Epitaxy", Journal of Crystal Growth, 154, 72-80, (1995).
Friedrichs, P., et al., "Interface Properties of Metal-Oxide-Semiconductor Structures on N-Type 6H and 4H-SiC", J. Applied Physics, 79, 7814-7819, (May 15. 1996).
Fujii, T. et al., "Bonding Structures in Highly Photoconductive a-SiC:H Films Deposited by Hybrid-Plasma Chemical Vapor Deposition", Journal of Non-Crystalline Solids, 198-200, 577-581, (1996).
Goetzberger, A., et al., Applied Solid State Science: Advances in Materials and Device Research, R. Wolfe, ed., Academic Press, New York, Including p. 233, (1969).
Graul, J., et al., "Growth Mechanism of Polycrystalline beta-SiC Layers on Silicon Substrate", Applied Phys. Lett., 21, 67-69, (Jul. 1972).
Hamakawa, Y., et al., "Optoelectronics and Photovoltaic Applications of Microcrystalline SiC", Materials Research Society Symposium Proceedings, 164, Boston, MA, 291-301, (Nov. 29 -Dec. 1, 1989).
He, Z., et al., "Ion-beam-assisted Deposition of Si-carbide Films", Thin Solid Films, 260, 32-37, (1995).
Hu, G., et al., "Will Flash Memory Replace Hard Disk Drive?", IEEE Electron Devices Meeting, Session 24, (Dec. 13, 1994).
Hurwitz, F., et al., "Characterization of the Pyrolytic Conversion of Polysilsequioxanes to Silicon Oxycarbides", J. Materials Science, 28, 6622-6630, (1993).
Hwang, J., et al., "High Mobility beta-SiC Epilayer Prepared by Low-pressure Rapid Thermal Chemical Vapor Deposition on a (100) Silicon Substrate", Thin Solid Films, 272, 4-6, (1996).
Hybertsen, M.S., "Absorption and Emission of Light in Nanoscale Silicon Structures", Phys. Rev. Lett., 72, 1514-1517, (1994).
Jou, S., et al., "Electron Emission Characterization of Diamond Thin Films Grown from a Solid Carbon Source", Thin Solid Films, 280, 256-261, (1996).
Kato, M., et al., "Read-Disturb Degradation Mechanism due to Electron Trapping in the Tunnel Oxide for Low-voltage Flash Memories", IEEE Electron Device Meeting, 45-48, (1994).
Kothandaraman, M., et al., "Reactive Ion Etching of Trenches in 6H-SiC", J. Electronic Materials, 25, 875-878, (1996).
Kumbhar, A., et al., "Growth of Clean Amorphous Silicon-Carbon Alloy Films by Hot-Filament Assisted Chemical Vapor Deposition Technique", Applied Phys. Lett., 66, 1741-1743, (Apr. 1996).
Lakshmi, E., et al., "Interface-State Characteristics of GaN/GaAs MIS Capacitors", Solid-State Electronics, 25, 811-815, (1982).
Lanois, F., et al., "Angle Etch Control for Silicon Carbide Power Devices", Applied Phys. Lett., 69, 236
Ahn Kie Y.
Forbes Leonard
Jones Josetta I.
Micro)n Technology, Inc.
Niebling John
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