Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2011-03-08
2011-03-08
Norton, Nadine G (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S654000, C438S689000, C438S781000, C438S784000
Reexamination Certificate
active
07902073
ABSTRACT:
A method for etching features in an etch layer disposed below a mask on a process wafer is provided. A hydrocarbon based glue layer is deposited. The etch layer on the process wafer is etched with at least one cycle, wherein each cycle comprises depositing a hydrofluorocarbon layer over the mask and on the hydrocarbon based glue layer, wherein the hydrocarbon based glue layer increases adhesion of the hydrofluorocarbon layer and etching the etch layer.
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Gupta Deepak K.
Kim Ji Soo
Lee Sang-heon
Reza Sadjadi S. M.
Beyer Law Group LLP
Dahimene Mahmoud
Lam Research Corporation
Norton Nadine G
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