Glue layer for hydrofluorocarbon etch

Semiconductor device manufacturing: process – Chemical etching – Combined with coating step

Reexamination Certificate

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Details

C438S654000, C438S689000, C438S781000, C438S784000

Reexamination Certificate

active

07902073

ABSTRACT:
A method for etching features in an etch layer disposed below a mask on a process wafer is provided. A hydrocarbon based glue layer is deposited. The etch layer on the process wafer is etched with at least one cycle, wherein each cycle comprises depositing a hydrofluorocarbon layer over the mask and on the hydrocarbon based glue layer, wherein the hydrocarbon based glue layer increases adhesion of the hydrofluorocarbon layer and etching the etch layer.

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patent: 6197704 (2001-03-01), Endo et al.
patent: 6472107 (2002-10-01), Chan
patent: 6630410 (2003-10-01), Trapp et al.
patent: 2002/0022281 (2002-02-01), Flanner et al.
patent: 2005/0181598 (2005-08-01), Kailasam
patent: 2006/0130873 (2006-06-01), Richardson et al.
patent: 2006/0157448 (2006-07-01), Magni et al.

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