Gate-induced strain for MOS performance improvement

Details Gate-induced strain for MOS performance improvement Gate-induced strain for MOS performance improvement

2005-03-01

2008-11-18

Pham, Hoai V (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S301000, C257SE21632

Reexamination Certificate

active

07452764

ABSTRACT:
A method including forming a device on a substrate, the device including a gate electrode on a surface of the substrate; a first junction region and a second junction region in the substrate adjacent the gate electrode; and depositing a straining layer on the gate electrode.

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