Gate etch process

Details Gate etch process Gate etch process

2006-09-26

2006-09-26

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S327000, C257S368000, C257SE21001, C438S585000, C438S197000, C438S710000, C438S724000

Reexamination Certificate

active

07112834

ABSTRACT:
A method of making a semiconductor structure includes etching an anti-reflective coating layer at a pressure of 10 millitorr or less; etching a nitride layer with a first nitride etch plasma having a first F:C ratio; and etching the nitride layer with a second nitride etch plasma having a second F:C ratio. The first F:C ratio is greater than the second F:C ratio.

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Wolf, “Silicon Processing for the VLSI Era”, vol. 1-Process Technology, pp. 550-556, Nov. 1999.

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