Gate electrode structure

Details Gate electrode structure Gate electrode structure

2011-08-30

2011-08-30

Le, Thao X (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S288000, C257S324000

Reexamination Certificate

active

08008155

ABSTRACT:
An electrode structure, e.g., a gate electrode for a transistor, includes: a volume of semiconductor material; a gate oxide on the semiconductor volume; a barrier layer, including silicon nitride, on the gate oxide layer; an adhesion layer on the barrier layer; and a metallic layer on the adhesion layer.

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