Gate electrode of a semiconductor device and method of...

Details Gate electrode of a semiconductor device and method of... Gate electrode of a semiconductor device and method of...

2006-07-11

2006-07-11

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S315000

Reexamination Certificate

active

07074671

ABSTRACT:
Disclosed are an electrode of a semiconductor device and a method of forming the same. A polysilicon layer is formed on a semiconductor substrate. An amorphous silicon capping layer is then formed on the polysilicon layer. A silicide layer is formed on the capping layer. The capping layer prevents chlorine ions from diffusing downward to the polysilicon layer. Accordingly, abnormal growth of the polysilicon layer can be prevented, thus improving the stability of the electrical characteristics of a semiconductor device electrode.

REFERENCES:
patent: 5877074 (1999-03-01), Jeng et al.
patent: 6133093 (2000-10-01), Prinz et al.
patent: 6180454 (2001-01-01), Chang et al.
patent: 6235563 (2001-05-01), Oka et al.
patent: 6-140355 (1994-05-01), None
English language abstract of Japanese Publication No. 6-140355.

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