Gate electrode forming methods using conductive hard mask

Details Gate electrode forming methods using conductive hard mask Gate electrode forming methods using conductive hard mask

2006-08-01

2006-08-01

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S216000, C438S233000

Reexamination Certificate

active

07084024

ABSTRACT:
Methods related to formation of a gate electrode are disclosed that employ a conductive hard mask as a protective layer during a photoresist removal process. In preferred embodiments, the conductive hard mask includes a metal containing conductor or a metal silicide. The invention prevents process damage on the gate dielectric during wet and/or dry resist strip, and since the conductive hard mask cannot be etched in typical resist strip chemistries, the invention also protects a metal electrode under the hard mask. The steps disclosed allow creation of a multiple work function metal gate electrode, or a mixed metal and polysilicon gate electrode, which do not suffer from the problems of the related art.

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