Gate effective-workfunction modification for CMOS

Details Gate effective-workfunction modification for CMOS Gate effective-workfunction modification for CMOS

2011-05-24

2011-05-24

Pizarro, Marcos D. (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C257S369000, C257SE21632

Reexamination Certificate

active

07947549

ABSTRACT:
CMOS circuit structures are disclosed with the PFET and NFET devices having high-k dielectric layers consisting of the same gate insulator material, and metal gate layers consisting of the same gate metal material. The PFET device has a “p” interface control layer which is capable of shifting the effective-workfunction of the gate in the p-direction. In a representative embodiment of the invention the “p” interface control layer is aluminum oxide. The NFET device may have an “n” interface control layer. The materials of the “p” and “n” interface control layers are differing materials. The “p” and “n” interface control layers are positioned to the opposite sides of their corresponding high-k dielectric layers. Methods for fabricating the CMOS circuit structures with the oppositely positioned “p” and “n” interface control layers are also disclosed.

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