Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2002-07-26
2008-11-11
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S591000, C438S761000, C438S762000, C438S778000
Reexamination Certificate
active
07449385
ABSTRACT:
CMOS gate dielectric made of high-k metal silicates by reaction of metal with silicon dioxide at the silicon surface. Optionally, a silicon dioxide monolayer may be preserved at the interface.
REFERENCES:
patent: 6479404 (2002-11-01), Steigerwald et al.
patent: 2003/0054669 (2003-03-01), Alluri et al.
patent: 2003/0164525 (2003-09-01), Rotondaro et al.
Colombo Luigi
Mercer Douglas E.
Rotondaro Antonio L. P.
Brady III W. James
Garner Jacqueline J.
Lee Hsien-ming
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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