Gate dielectric and method

Details Gate dielectric and method Gate dielectric and method

2006-03-28

2006-03-28

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S785000

Reexamination Certificate

active

07018902

ABSTRACT:
A MOSFET structure with high-k gate dielectric layer and silicon or metal gates, amorphizing treatment of the high-k gate dielectric layer as with a plasma or ion implantation.

REFERENCES:
patent: 4844775 (1989-07-01), Keeble
patent: 5552337 (1996-09-01), Kwon et al.
patent: 6225122 (2001-05-01), Sah et al.
patent: 6348373 (2002-02-01), Ma et al.
patent: 6429497 (2002-08-01), Nickel
patent: 6458695 (2002-10-01), Lin et al.
patent: 6475854 (2002-11-01), Narwankar et al.
patent: 6509200 (2003-01-01), Koyanagi
patent: 6514828 (2003-02-01), Ahn et al.
patent: 6525427 (2003-02-01), Duncombe et al.
patent: 6544906 (2003-04-01), Rotondaro et al.
patent: 6573193 (2003-06-01), Yu et al.
patent: 6607993 (2003-08-01), Dickinson et al.
patent: 2001/0013660 (2001-08-01), Duncombe et al.

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