Gate dielectric and method

Details Gate dielectric and method Gate dielectric and method

2005-07-19

2005-07-19

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S216000, C438S275000, C438S785000, C438S788000

Reexamination Certificate

active

06919251

ABSTRACT:
CMOS gate dielectric made of high-k metal silicates by passivating a silicon surface with nitrogen compounds prior to high-k dielectric deposition. Optionally, a silicon dioxide monolayer may be preserved at the interface.

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patent: 6020024 (2000-02-01), Maiti et al.
patent: 6297539 (2001-10-01), Ma et al.
patent: 6306742 (2001-10-01), Doyle et al.
patent: 6682973 (2004-01-01), Paton et al.
patent: 2003/0129817 (2003-07-01), Visokay et al.
patent: 0973189 (2000-01-01), None

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