Gas distribution system for a CVD processing chamber

Coating apparatus – Gas or vapor deposition

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Details

118723I, 156345, C23C 1600, H05H 100

Patent

active

061430781

ABSTRACT:
The present invention provides an apparatus for depositing a film on a substrate comprising a processing chamber, a substrate support member disposed within the chamber, a first gas inlet, a second gas inlet, a plasma generator and a gas exhaust. The first gas inlet provides a first gas at a first distance from an interior surface of the chamber, and the second gas inlet provides a second gas at a second distance that is closer than the first distance from the interior surface of the chamber. Thus, the second gas creates a higher partial pressure adjacent the interior surface of the chamber to significantly reduce deposition from the first gas onto the interior surface. The present invention also provides a method for depositing a film on a substrate comprising: providing a chemical vapor deposition chamber, introducing first gas through a first gas inlet at a first distance from an interior surface of the chamber, introducing a second gas through a second gas inlet at a second distance from the interior surface of the chamber, wherein the second gas creates a higher partial pressure adjacent the interior surface of the chamber to prevent deposition from the first gas on the interior surface and generating a plasma of the processing gases. Alternatively, the first gas is introduced at a different angle from the second gas with respect to a substrate surface.

REFERENCES:
patent: 4817558 (1989-04-01), Itoh
patent: 4949669 (1990-08-01), Ishii et al.
patent: 4989541 (1991-02-01), Mikoshiba et al.
patent: 5522934 (1996-06-01), Suzuki et al.
patent: 5851294 (1998-12-01), Young et al.
patent: 5851600 (1998-12-01), Horiike
U.S. application No. 08/679,927, Redeker et al., filed Jul. 15, 1996.
PCT International Search Report dated Apr. 17, 2000.

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