Coating apparatus – Gas or vapor deposition
Patent
1998-11-13
2000-11-07
Beck, Shrive
Coating apparatus
Gas or vapor deposition
118723I, 156345, C23C 1600, H05H 100
Patent
active
061430781
ABSTRACT:
The present invention provides an apparatus for depositing a film on a substrate comprising a processing chamber, a substrate support member disposed within the chamber, a first gas inlet, a second gas inlet, a plasma generator and a gas exhaust. The first gas inlet provides a first gas at a first distance from an interior surface of the chamber, and the second gas inlet provides a second gas at a second distance that is closer than the first distance from the interior surface of the chamber. Thus, the second gas creates a higher partial pressure adjacent the interior surface of the chamber to significantly reduce deposition from the first gas onto the interior surface. The present invention also provides a method for depositing a film on a substrate comprising: providing a chemical vapor deposition chamber, introducing first gas through a first gas inlet at a first distance from an interior surface of the chamber, introducing a second gas through a second gas inlet at a second distance from the interior surface of the chamber, wherein the second gas creates a higher partial pressure adjacent the interior surface of the chamber to prevent deposition from the first gas on the interior surface and generating a plasma of the processing gases. Alternatively, the first gas is introduced at a different angle from the second gas with respect to a substrate surface.
REFERENCES:
patent: 4817558 (1989-04-01), Itoh
patent: 4949669 (1990-08-01), Ishii et al.
patent: 4989541 (1991-02-01), Mikoshiba et al.
patent: 5522934 (1996-06-01), Suzuki et al.
patent: 5851294 (1998-12-01), Young et al.
patent: 5851600 (1998-12-01), Horiike
U.S. application No. 08/679,927, Redeker et al., filed Jul. 15, 1996.
PCT International Search Report dated Apr. 17, 2000.
Collins Alan W.
Gao Feng
Ishikawa Tetsuya
Krishnaraj Padmanabhan
Pang Lily
Applied Materials Inc.
Beck Shrive
Hassanzadeh Parviz
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