Gas chemistry for improved in-situ cleaning of residue for a CVD

Details Gas chemistry for improved in-situ cleaning of residue for a CVD Gas chemistry for improved in-situ cleaning of residue for a CVD

1995-07-14

2000-05-09

Dang, Thi

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438787, 438905, 134 11, 216 37, 216 67, H01L 2100

Patent

active

060603976

ABSTRACT:
A method (100) of cleaning residues from a chemical vapor deposition apparatus (10) is provided. The present method (100) includes introducing into a chamber (12) cleaning gases such as N.sub.2, C.sub.2 F.sub.6, and O.sub.2, and forming a plasma from the cleaning gases. The present method also includes removing residues from interior surfaces of the chamber 12 by forming a volatile product from the residues and at least one of the cleaning gases.

REFERENCES:
patent: 3806365 (1974-04-01), Jacob
patent: 4402758 (1983-09-01), Hobbs
patent: 4615761 (1986-10-01), Tada et al.
patent: 4657616 (1987-04-01), Benzing et al.
patent: 4877482 (1989-10-01), Knapp et al.
patent: 4960488 (1990-10-01), Law et al.
patent: 5011705 (1991-04-01), Tanaka
patent: 5035751 (1991-07-01), Nagashima et al.
patent: 5039388 (1991-08-01), Miyashita et al.
patent: 5057187 (1991-10-01), Shinagawa et al.
patent: 5129958 (1992-07-01), Nagashima et al.
patent: 5131752 (1992-07-01), Yu et al.
patent: 5158644 (1992-10-01), Cheung et al.
patent: 5207836 (1993-05-01), Chang
patent: 5221423 (1993-06-01), Sugino et al.
patent: 5252178 (1993-10-01), Moslehi
patent: 5260236 (1993-11-01), Petro et al.
patent: 5269881 (1993-12-01), Sekiya et al.
patent: 5281302 (1994-01-01), Gabric et al.
patent: 5286297 (1994-02-01), Moslehi et al.
patent: 5294262 (1994-03-01), Nishimura
patent: 5356478 (1994-10-01), Chen et al.
patent: 5380370 (1995-01-01), Niino et al.
patent: 5380397 (1995-01-01), Fukuyama et al.
patent: 5413670 (1995-05-01), Langan et al.
patent: 5425842 (1995-06-01), Zijlstra
patent: 5517943 (1996-05-01), Takahashi

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