FUSI integration method using SOG as a sacrificial...

Details FUSI integration method using SOG as a sacrificial... FUSI integration method using SOG as a sacrificial...

2009-01-05

2010-06-08

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Forming schottky junction

Using platinum group metal

C438S583000, C438S683000, C257SE29156

Reexamination Certificate

active

07732313

ABSTRACT:
A method for making a transistor20that includes using a transition metal nitride layer200and/or a SOG layer220to protect the source/drain regions60from silicidation during the silicidation of the gate electrode90. The SOG layer210is planarized to expose the transition metal nitride layer200or the gate electrode93before the gate silicidation process. If a transition metal nitride layer200is used, then it is removed from the top of the gate electrode93before the full silicidation of the gate electrode90.

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patent: 2006/0006476 (2006-01-01), Biery et al.
patent: 2006/0228885 (2006-10-01), Saito

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