Fuse window guard ring structure for nitride capped self aligned

Details Fuse window guard ring structure for nitride capped self aligned Fuse window guard ring structure for nitride capped self aligned

1997-09-19

1999-10-19

Dang, Trung

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438132, 438215, 438333, 438601, 148DIG55, H01L 21336

Patent

active

059703466

ABSTRACT:
The present invention provides a structure and method for forming a moisture barrier guard ring structure 38 44 48 52 54 for around a fuse window 30 in a semiconductor device. The invention begins by forming a fuse structure 32 33 34 over the isolation regions cross the fuse window area. A cap layer 38 and an interlevel dielectric layer (ILD) 40 are formed over the fuse structure. A first annular ring 44 (e.g., contact w-plug) is formed over the isolation region 20 surrounding the fuse window area 30 and over the fuse structure 32 33 34. A key feature is that the first annular ring 44 and the cap layer 38 form a moisture proof seal over the fuse structure. A first conductive wiring line 48 is formed over the first annular ring 44. Next, an inter metal dielectric (IMD) layer 50 is formed over the interlevel dielectric layer 40. A second annular ring 52 is formed through the inter metal dielectric layer 50 on the first conductive wiring line 48. A second conductive wiring line 54 is formed over the second annular ring 44. A passivation layer 60 64 is formed over the resulting surface and a fuse window 31 is etched through the passivation layer 60 64 and partially through the inter metal dielectric layer 50 over the fuse window area 30. The first annular ring 44, the first conductive wiring line 48, the second annular ring 52, the second conductive wiring line 54 comprise the invention's moisture proof guard ring structure surrounding the fuse window area.

REFERENCES:
patent: 5444012 (1995-08-01), Yoshizumi et al.
patent: 5538924 (1996-07-01), Chen
patent: 5567643 (1996-10-01), Lee et al.

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