Frequency doubling using spacer mask

Semiconductor device manufacturing: process – Chemical etching – Combined with coating step

Reexamination Certificate

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C257SE21249

Reexamination Certificate

active

07807578

ABSTRACT:
A method for fabricating a semiconductor mask is described. A semiconductor stack having a sacrificial mask and a spacer mask is first provided. The sacrificial mask is comprised of a series of lines and the spacer mask has spacer lines adjacent to the sidewalls of the series of lines. Next, the spacer mask is cropped. Finally, the sacrificial mask is removed to provide a cropped spacer mask. The cropped spacer mask doubles the frequency of the series of lines of the sacrificial mask.

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