Forming composite metal oxide layer with hafnium oxide and...

Details Forming composite metal oxide layer with hafnium oxide and... Forming composite metal oxide layer with hafnium oxide and...

2006-01-09

2008-09-23

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257S410000, C257S411000

Reexamination Certificate

active

07427573

ABSTRACT:
A metal oxide alloy layer comprises a first layer including a first metal oxide and having a first thickness, and a second layer formed on the first layer, the second layer including a second metal oxide and having a second thickness, wherein a value of the first thickness is such that the first metal oxide is allowed to move into the second layer and a value of the second thickness is such that the second metal oxide is allowed to move into the first layer to form a single-layered structure in which the first and second metal oxides are mixed.

REFERENCES:
patent: 6645882 (2003-11-01), Halliyal et al.
patent: 2003/0108674 (2003-06-01), Chung et al.
patent: 2004/0017280 (2004-01-01), Yamamoto et al.
patent: 2004/0219746 (2004-11-01), Vaartstra et al.
patent: 2007/0090439 (2007-04-01), Ahn et al.
patent: 2003-0092596 (2003-12-01), None

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