Formation of thin spacer at corner of shallow trench isolation (

Details Formation of thin spacer at corner of shallow trench isolation ( Formation of thin spacer at corner of shallow trench isolation (

1999-02-05

2000-06-27

Fahmy, Wael

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438436, 438437, H01L 2176

Patent

active

060806389

ABSTRACT:
A method to reduce to reduce DRAM capacitor STI junction leakage current. A Shallow Trench Isolation opening is formed, within this opening Field Oxide is deposited. The top surface of the FOX is etched down and a second layer of oxide is deposited over the FOX and the adjacent active regions. This second layer of oxide is etched bringing the top surface down to below the level of the top surface of the surrounding active areas but leaving spacers where the top surface of the FOX intersects with the active areas.

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