Formation of metal gate electrode using rare earth alloy...

Details Formation of metal gate electrode using rare earth alloy... Formation of metal gate electrode using rare earth alloy...

2008-09-08

2011-11-15

Fahmy, Wael (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S587000

Reexamination Certificate

active

08058122

ABSTRACT:
Semiconductor devices and fabrication methods are provided, in which metal transistor gates are provided for MOS transistors. A rare earth-rare earth alloy incorporated metal nitride layer is formed above a gate dielectric. This process provides adjustment of the gate electrode work function, thereby tuning the threshold voltage of the resulting NMOS transistors.

REFERENCES:
patent: 6936508 (2005-08-01), Visokay et al.
patent: 2006/0234433 (2006-10-01), Luan et al.
patent: 2006/0244035 (2006-11-01), Bojarczuk et al.
patent: 2007/0148838 (2007-06-01), Doris et al.

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